功率对制备β-FeSi2薄膜的影响

利用磁控溅射方法,溅射室背底真空优于2.0×10-5 Pa,采用不同的功率在Si(100)(电阻率为7~13 Ωcm)衬底上沉积一层铁薄膜(150~330 nm),然后在900 ℃,15 h背底真空条件下(4×10-4 Pa)退火,形成了β-FeSi2。采用扫描电子显微镜(SEM)对其表面形貌结构进行表征,并采用X射线衍射仪(XRD)对其进行了晶体的结构分析,当溅射功率为70~100 W时,主要衍射峰来自β-FeSi2,但同时在2θ=45°处有较大的FeSi峰,在2θ=38°附近出现较大的Fe5Si3峰。研究结果表明,制备β-FeSi2薄膜的最佳溅射功率为110 W,在900 ℃退火15 h。

Impact of Power on the Preparation of β-FeSi2 Films

The magnetron sputtering method with the sputtering chamber backing vacuum better than 2.0 × 10-5 Pa,is used.A layer of Fe film(150 nm~330 nm) is deposited on the substrate of the Si(100) (electrical resistivity of 7~13 Ωcm) at different powers.Then at 900 ℃,it is annealed for 15 hours with the backing being vacuum(4 × 10-4 Pa) to form a β FeSi2.The scanning electron microscopy(SEM) is used to characterize its surface morphology structure.The X ray diffraction(XRD) is used to analyze its crystal structure.When the sputtering power is 70~100 W,the main diffraction peak is derived from β FeSi2,but at 2θ=45 °a relatively large FeSi large peak appears,and a larger Fe5Si3 peak appears in the vicinity of 2θ=38 °.The results show that the best preparation for the β FeSi2 film is annealing at 900 ℃ for 15 hours with a sputtering power of 110 W.