| 表面粗化提高绿光LED的光提取效率 |
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| 引用本文： | 李慧,李培咸,史会芳,赵广才.表面粗化提高绿光LED的光提取效率[J].电子科技,2010,23(6):25-28. |
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| 作者姓名： | 李慧 李培咸 史会芳 赵广才 |
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| 作者单位： | （西安电子科技大学 技术物理学院,陕西 西安 710071） |
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| 基金项目： | GaN高亮度蓝光LED产业化资助项目 |
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| 摘 要： | 介绍了通过出光表面粗化减少全反射的方法。理论计算了以腐蚀坑为三角坑的最优尺寸。实验使用熔融KOH腐蚀绿光LED外延片获得预计的粗糙形貌,再通过常规工艺制成器件,结果给出不同表面做成器件的光强。实验证明经过表面粗化处理的器件,外量子效率提高了约25.7%。
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| 关 键 词： | 三角坑 LED外延片 表面粗化 外量子效率 |
Enhancement of Extraction Efficiency of Green LED via Surface Roughening |
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| Li Hui,Li Peixian,Shi Huifang,Zhao Guangcai.Enhancement of Extraction Efficiency of Green LED via Surface Roughening[J].Electronic Science and Technology,2010,23(6):25-28. |
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| Authors: | Li Hui Li Peixian Shi Huifang Zhao Guangcai |
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| Affiliation: | (School of Technical Physics,Xidian University,Xi'an 710071,China) |
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| Abstract: | An introduction is given to a method for decreasing total reflection by roughening the upper surface of LED.The optimal size of the triangular etching pit is calculated theoretically.The expected surface morphology is achieved by using molten KOH to etch the green LED epitaxial wafer.Then the LED epitaxial wafer is made into devices by the conventional process.The light power is measured.The experiment results show that the external quantum efficiency of the device which is treated by surface-roughening is enhanced by 25.7%. |
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| Keywords: | triangular etching pit LED epitaxial wafer surface-roughening external quantum efficiency |
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