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A solvent-free lift-off method for realizing vertical organic transistors with low leakage current and high ON/OFF ratio |
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| Affiliation: | 1. College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, PR China;2. Département OASiS (Organic and Silicon Systems), Institut d''Electronique et des Technologies du numéRique, Université de Rennes 1, Rennes 35042 CEDEX, France |
| Abstract: | A solvent-free lift-off method has been introduced to fabricate the aluminum nano-hole array with diameter down to 80 nm as the base electrode for a vertical organic transistor. The imprinted vertical organic transistor exhibited base leakage current density as low as 5 × 10?5 mA/cm2 and high ON/OFF current ratio as high as 105. |
| Keywords: | Nanoimprint lithography Vertical Organic transistor P3HT Lift-off |
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