Spontaneous growth by sol-gel process of low temperature ZnO as cathode buffer layer in flexible inverted organic solar cells |
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| Affiliation: | 1. Department of Photonics, National Sun Yat-sen University, Kaohsiung 804, Taiwan;2. Department of Chemical Engineering and Materials Science, National Kaohsiung University of Applied Sciences, Kaohsiung 807, Taiwan;1. University of Barcelona, Department of Electronics, Martí i Franquès 1, E08028-Barcelona, Spain;2. University of Girona, Department of Physics, Campus Montilivi, Edif. PII, E17071-Girona, Catalonia, Spain;3. University of Barcelona, Department of Inorganic Chemistry, Martí i Franquès 1, E08028-Barcelona, Spain;1. School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, Shandong, China;2. State Key Laboratory of Supramolecular Structure and Materials, Institute of Theoretical Chemistry, Jilin University, Changchun, 130012, China;3. ARC Centre of Excellence in Exciton Science, School of Chemistry, University of Melbourne, Parkville, 3010, Victoria, Australia;1. School of Advanced Materials Engineering and Research Center of Advanced Materials Development, Chonbuk National University, 567 Baekje-daero, Deokjin-gu, Jeonju-si, Jeollabuk-do 54896, Republic of Korea;2. School of Semiconductor and Chemical Engineering, Chonbuk National University, 567 Baekje-daero, Deokjin-gu, Jeonju-si, Jeollabuk-do 54896, Republic of Korea;3. School of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea |
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| Abstract: | In this study, the sol–gel method was employed to prepare zinc oxide (ZnO) thin films as cathode buffer layers for inverted organic solar cells (IOSCs). We used a low temperature sol-gel process for the synthesis of ZnO thin films, in which the molar ratio of zinc acetate dihydrate (ZAD) to ethanolamine (MEA) was varied; subsequently, using the thin films, we successfully fabricated inverted solar cells on flexible plastic substrates. A ZnO sol–gel was first prepared by dissolving ZAD and MEA in ethylene glycol monomethyl ether (EGME). The molar ratios of ZAD to MEA were set as 1:1.2, 1:1, and 1:0.8, and we investigated the characteristics of the resulting ZnO thin films. We investigated the optical transmittance, surface roughness, and surface morphology of the films. Then, we discussed the reasons about the improvement of the device efficiency. The devices were fabricated using the ZnO thin films as cathode buffer layers. The results indicated that the morphology of the thin films prepared using the ZAD to MEA ratios of 1:1 and 1:0.8 changed to a rippled nanostructure after two-step annealing. The PCE was enhanced because of the higher light absorption in the active layer caused by the nanostructure. The structure of the inverted device was ITO/ZnO/P3HT:PC61BM/MoO3/Ag. The short-circuit current densities (8.59 mA/cm2 and 8.34 mA/cm2) of the devices with films prepared using the ZAD to MEA ratios of 1:1 and 1:0.8 ratios, respectively, and annealed at 125 °C were higher than that of the device containing the ZnO thin film that was annealed at 150 °C. Inverted solar cells with ZnO films that were prepared using the ZAD to MEA ratios of 1:1 and 1:0.8 and annealed at 125 °C exhibited PCEs of 3.38% and 3.30%, respectively. More than that, PCEs of the flexible device can reach up to 1.53%. |
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| Keywords: | Sol-gel Zinc oxide Low-temperature Inverted polymer solar cells Flexible device |
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