TiI4-doping induced bulk defects passivation in halide perovskites for high efficient photovoltaic devices |
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| Affiliation: | 1. Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, China;2. School of Energy, Soochow University, Suzhou, Jiangsu 215006, China;3. Faculty of Engineering, University of Toyama, Gofuku 3190, Toyama 930-8555, Japan;1. Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, China;2. Chongqing Key Laboratory for Advanced Materials and Technologies of Clean Energy, School of Materials & Energy, Southwest University, Chongqing, China;1. Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China;2. School of Physics and Optoelectronic Engineering, Xidian University, Xi’an 710071, China;3. Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, China;4. Department of Chemistry, School of Science, Xi’an Jiaotong University, Xi’an 710049, China;5. Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China |
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| Abstract: | Power conversion efficiency (PCE) and stability are two important properties of perovskite solar cells (PSCs). Particularly, defects in the perovskite films could cause the generation of trap states, thereby increasing the nonradiative recombination. To address this issue, suitable dopants can be incorporated to react with non-bonded atoms or surface dangling bonds to passivate the defects. Herein, we introduced TiI4 into CH3NH3PbI3 (MAPbI3) film and obtained a dense and uniform morphology with large crystal grains and low defect density. The champion cell based on 0.5% TiI4-doped MAPbI3 achieved a PCE as high as 20.55%, which is superior to those based on pristine MAPbI3 (17.64%). Moreover, the optimal solar cell showed remarkable stability without encapsulation. It retained 88.03% of its initial PCE after 300 h of storage in ambient. This work demonstrates TiI4 as a new and effective passivator for MAPbI3 film. |
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| Keywords: | Hybrid halide perovskite Doping Crystallization Defects Stability |
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