Photoluminescence analysis of InAIAs-InGaAs HFET Material with Varied Placement of Heavy δ-Doping |
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Authors: | William E Leitch Bernd U Henle Erhard Kohn |
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Affiliation: | (1) Department of Electron Devices and Circuits, University of Ulm, D-89069 Ulm, Federal Republic of Germany |
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Abstract: | Low temperature photoluminescence (PL) has been used to characterize InAlAs/InGaAs/InP heterojunction field-effect transistor
(HFET) structure material. A phenomenological lineshape model has been applied to the PL spectrum to derive energy levels
and the position of the Fermi-energy and hence the channel carrier concentration. The data is compared with results from low-temperature
Hall and Shubnikov-de Hans (SdH) measurements, and fit with a charge-control model of the conduction band. Values for the
sheet density are derived from PL for channel-doped structures where SdH measurements are difficult. Changes in the quantum
well symmetry through variations in the dopant distribution are shown to be reflected in the PL lineshape. |
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Keywords: | Heterojunction field effect transistor (HFET) High electron mobility transistor (HEMT) InAlAs InGaAs InP Photoluminescence (PL) |
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