(1) Department of Information Technology, University of Gent/IMEC, Sint-Pietersnieuwstraat 41, B-9000 Gent, Belgium;(2) Union Minière-Advanced Materials/Venture Unit, Watertorenstraat 33, B-2250 Olen, Belgium
Abstract:
MOVPE growth of AlGaInP layers on GaAs and Ge have been demonstrated. The surface morphology of the epilayers was smooth under
optimized growth conditions. The epilayers showed good PL intensity on both GaAs and Ge substrates. It has been observed that
at room temperature the PL intensity drops in the first few seconds after excitation and attains a steady state. The Zn-doped
AlGaInP did not show any signs of H-passivation. The MQW LEDs on both the substrates produced electroluminescence which increased
with applied current. Results indicate the feasibility of AlGaInP LEDs on Ge.