Doping Effects on Thermoelectric Properties
in the Mg2Sn System |
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Authors: | Soon-Mok Choi Tae Ho An Won-Seon Seo Chan Park Il-Ho Kim Sun-Uk Kim |
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Affiliation: | 1. Green Ceramics Division, Korea Institute of Ceramic Engineering and Technology (KICET), Seoul, 233-5, Republic of Korea 2. Department of Materials Science and Engineering, Seoul National University, 599, Gwanangno, Gwanak-gu, Seoul, 151-744, Republic of Korea 3. Department of Material Science and Engineering, Chung-ju National University, Chung-buk, 380-702, Republic of Korea 4. Functional Materials Research Department, Research Institute of Industrial Science and Technology (RIST), Pohang, 790-330, Republic of Korea
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Abstract: | A weak point of Mg2X thermoelectrics is the absence of a p-type composition, which motivates research into the Mg2Sn system. Mg2Sn thermoelectrics were fabricated by a vacuum melting method and a spark plasma sintering process. As a result, Mg2Sn single phases were acquired in a wide range of Mg-to-Sn atomic ratios (67:33 to 71:29), showing slightly different thermoelectric characteristics. However, the thermoelectric properties of the undoped system were not sufficient for application in commercial production. To maximize the p-type characteristics, many atoms Ni (VIIIA), Cu (IB), Ag (IB), Zn (IIB), and In (IIIB)] were doped into the Mg2Sn phase. Among them, the power factor values increased only in the Ag-doped case. Ag-doping resulted in a power factor that was more than 10 times larger than the value in the undoped case. This result could be important for developing p-type polycrystalline thermoelectrics in the Mg2X (X?=?Si, Sn) system. However, other atoms Ni (VIIIA), Cu (IB), Zn (IIB), and In (IIIB)] were not determined to act as acceptor atoms. The maximum ZT value for the Ag-doped Mg2Sn thermoelectric was more than 0.18, which is comparable to the value for the n-type Mg2Si system. |
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