Selectively etched tunnel junction for lateral current and optical confinement in InP-based vertical cavity lasers |
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| Authors: | M H M Reddy D Feezell T Asano D A Buell A S Huntington R Koda L A Coldren |
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| Affiliation: | (1) Department of Electrical and Computer Engineering, University of California, Santa Barbara, 93106 Santa Barbara, CA;(2) Department of Materials Science, University of California, Santa Barbara, 93106 Santa Barbara, CA |
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| Abstract: | We demonstrate a thin, selectively lateral-etched, AlIn(Ga)As tunnel-junction (TJ) layer as a current and optical confinement
aperture in the InP-based long-wavelength vertical cavity surface-emitting lasers (VCSELs). A high etch selectivity was demonstrated
by etching the aperture a distance of several microns without affecting the surrounding InP etch-resistant layer. Edgeemitting
lasers enclosing the TJ aperture showed high injection efficiency and low current spreading underneath the aperature. Single-mode
continuous-wave operation of a 1.55-μm VCSEL was demonstrated successfully with a room-temperature differential efficiency
of 21% using a 6-μm-wide TJ aperature. |
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| Keywords: | InP-based tunnel junction vertical cavity surface emitting lasers (VCSELs) |
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