Electrical properties and luminescence of CuInSe2 |
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Authors: | P Migliorato J L Shay H M Kasper |
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Affiliation: | (1) Bell Telephone Laboratories, Incorporated, Holmdel and Murray Hill, New Jersey;(2) Present address: Laboratorio di Elettronica dello Stato Solido del C.N.R., Roma, Italy |
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Abstract: | We have studied the electrical properties and luminescence spectra of melt-grown CuInSe2 single crystals and the doping of the crystals with intrinsic defects and extrinsic impurities. The preparation and the properties
of p-n junctions are also discussed. We find that the low temperature photoluminescence spectra of crystals as-grown or annealed
between 400 and 700 C are characteristic of the conductivity type. At 77 K, p-type crystals emit in a band peaked at 1.00
eV (type A spectrum) whereas the emission of n-type crystals peaks at 0.93 eV (type B spectrum). Type A and type B spectra
can be interchanged by alternate anneals in minimum or maximum Se pressure. Type B emission dominates the electroluminescence
spectrum of p-n junctions. These features are explained by the appearing and disappearing of a donor level as a consequence
of annealing in vacuum or in Se atmosphere. We find that Zn and Cd act as donors. Crystals doped with these impurities have
electron concentrations above 1018 cm−3. Zn-dopped samples exhibit a very broad recombination band below the bandgap in photoluminescence both at 77 and 300 K. |
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Keywords: | CuInSe2 Luminescence |
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