Investigation of strain-compensated lnGaAs(P)/lnGaAs(P)/lnP multiple quantum well structures grown by LP-MOVPE |
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Authors: | Haiyan An Shuren Yang Shiyong Liu |
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Affiliation: | (1) State Key Laboratory on Integrated Optoelectronics, Department of Electronic Engineering, Jilin University, Number 119, Jiefang Road, 130023 Changchun, P.R. China |
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Abstract: | A controversy exists regarding the effectiveness, in the high strain case, of the strain-compensated InGaAs(P)/InGaAs(P)/InP
multiple quantum well (MQW) structures. In this paper, the mechanism of the crystal quality degradation in the high strain
case is analyzed. Based on our experiments and analysis, we suggest that the crystal quality degradation is predominately
affected by the growth temperature and V/III ratios in the gas phase. We demonstrate that, in the case of high strain in the
wells, high quality and stable strain-compensated MQW structures can be grown at relatively low growth temperature and relatively
high V/III ratios in the gas phase through decreasing the strain in barriers and increasing the thicknesses of barriers simultaneously
to achieve zero net strain. |
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Keywords: | InGaAs InGaAsP low pressure metalorganic vapor phase epitaxy (LP-MOVPE) strain-compensated multiple quantum well (MQW) structures |
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