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Super-flat interfaces in In0.53Ga0.47As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy |
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| Authors: | Takahiro Kitada Tatsuya Saeki Masanobu Ohashi Satoshi Shimomura Akira Adachi Yasunori Okamoto Naokatsu Sano Satoshi Hiyamizu |
| Affiliation: | (1) Department of Physical Science, Graduate School of Engineering Science, Osaka University, Toyonaka, 560 Osaka, Japan;(2) Research Development Division, Nissin Electric Co. Ltd., Umezu-Takase-cho, Ukyouku, 615 Kyoto, Japan;(3) Research and Headquarters Kubota LTD., Amagasaki, 661 Hyogo, Japan;(4) Faculty of Science, Kwansei-Gakuin University, Nishinomiya, 662 Hyogo, Japan |
| Abstract: | Effectively atomically flat interfaces over a macroscopic area (“(411)A super-flat interfaces”) were successfully achieved in In0.53Ga0.47As/In0.52Al0.48As quantum wells (QWs) grown on (411)A InP substrates by molecular beam epitaxy (MBE) at a substrate temperature of 570°C and V/III=6. Surface morphology of the In0.53Ga0.47As/In0.52Al0.48As QWs was smooth and featureless, while a rough surface of those simultaneously grown on a (100) InP substrate was observed. Photoluminescence (PL) linewidths at 4.2 K from the (411)A QWs with well width of 0.6–12 nm were 20–30 % narrower than those grown on a (100) InP substrate and also they are almost as narrow as each of split PL peaks for those of growth-interrupted QWs on a (100) InP substrate. In the case of the (411)A QWs, only one PL peak with very narrow linewidth was observed from each QW over a large distance (7 mm) on a wafer. |
| Keywords: | (411)A InP substrates InAlAs InGaAs molecular beam epitaxy (MBE) photoluminescence (PL) super-flat interfaces |
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