Fabrication of Strained-Si/Strained-Ge Heterostructures
on Insulator |
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Authors: | Leonardo Gomez Michael Canonico Meekyung Kim Pouya Hashemi Judy L Hoyt |
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Affiliation: | (1) Microsystems Technology Laboratory, Massachusetts Institute of Technology, 60 Vassar Street, Room 39-661, Cambridge, MA 02139, USA;(2) Physical Analysis Laboratory, Freescale Semiconductor, Tempe, AZ, USA |
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Abstract: | Ultrathin strained-Si/strained-Ge heterostructures on insulator have been fabricated using a bond and etch-back technique.
The substrate consists of a trilayer of 9 nm strained-Si/4 nm strained-Ge/3 nm strained-Si on a 400-nm-thick buried oxide.
The epitaxial trilayer structure was originally grown pseudomorphic to a relaxed Si0.5Ge0.5 layer on a donor substrate. Raman analysis of the as-grown and final transferred layer structures indicates that there is
little change in the strain in the Si and Ge layers after layer transfer. These ultrathin Si and Ge films have very high levels
of strain (∼1.8% biaxial tension and 1.4% compression, respectively), and are suitable for enhanced-mobility field-effect
transistor applications. |
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Keywords: | Strained-Si strained-Ge heterostructure on insulator UTB MOSFETs high-mobility substrate bond and etch-back |
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