Electrochemically induced asymmetrical etching in InAlAs/InGaAs heterostructures for MODFET gate-groove fabrication |
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Authors: | D Xu T Enoki T Suemitsu Y Umeda H Yokoyama Y Ishii |
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Affiliation: | (1) NTT System Electronics Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, 243-0198 Kanagawa, Japan |
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Abstract: | We have achieved a self-controlled asymmetrical etching in metalorganic chemical vapor deposition-grown InAlAs/InGaAs heterostructures,
which can be suitable for fabricating modulation-doped field-effect transistors (MODFETs) with gate-groove profiles for improved
performance. The technology is based on electrochemical etching phenomena, which can be effectively controlled by using different
surface metals for ohmic electrodes. When surface metals of Pt and Ni are deposited on the source and the drain, respectively,
the higher electrode potential of Pt results in slower etching on the source side than on the drain side. Thus, asymmetry
of gate grooves can be formed by wet-chemical etching with citric-acid-based etchant. This represents a new possibility to
conduct “recess engineering” for InAlAs/InGaAs MODFETs. |
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Keywords: | Etching gate recess heterojunction InAlAs InGaAs |
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