Magnetic effects of direct ion implantation of Mn and Fe into p-GaN |
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| Authors: | K P Lee S J Pearton M E Overberg C R Abernathy R G Wilson S N G Chu N Theodoropolou A F Hebard J M Zavada |
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| Affiliation: | (1) Department of Materials Science and Engineering, University of Florida, 32611 Gainesville, FL;(2) Stevenson Ranch, 93181, CA;(3) Agere Systems, 07974 Murray Hill, NJ;(4) Department of Physics, University of Florida, 32611 Gainesville, FL;(5) Army Research Office, 27709 Research Triangle Park, NC |
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| Abstract: | In p-GaN implanted with Mn (3×1016 cm−2 at 250 keV), the material after annealing shows ferromagnetic properties below 250 K. Cross-sectional transmission electron
microscopy (TEM) revealed the presence of platelet structures with hexagonal symmetry. These regions are most likely GaxMn1−xN, which produce the ferromagnetic contribution to the magnetization. In p-GaN implanted with Fe, the material after annealing
showed ferromagnetic properties at temperatures that were dependent on the Fe dose, but were below 200 K in all cases. In
these samples, TEM and diffraction analysis did not reveal any secondary phase formation. The results for the Fe implantation
are similar to those reported for Fe doping during epitaxial growth of GaN. |
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| Keywords: | GaN ferromagnetism dilute magnetic semiconductors ion implantation |
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