The influence of As and Ga prelayers on the metal-organic chemical vapor deposition of GaAs/Ge |
| |
Authors: | R Tyagi M Singh M Thirumavalavan T Srinivasan S K Agarwal |
| |
Affiliation: | (1) Solid State Physics Laboratory, Lucknow Road, 110054 Timarpur, Delhi, India |
| |
Abstract: | GaAs epilayers were grown on Ge by metal-organic chemical vapor deposition (MOCVD) with As or Ga prelayers. The grown epilayers
were examined for surface morphology, antiphase domain (APD) presence, and optical quality using optical interference contrast
microscopy, molten potassium hydroxide (KOH) etching, and photoluminescence (PL) spectroscopy. The As prelayer results in
smooth, shiny, and APD-free epilayers with good optical quality. In contrast, the Ga prelayer results in a rough surface with
APDs and higher carbon incorporation. |
| |
Keywords: | GaAs/Ge MOCVD prelayers APDs surface morphology PL |
本文献已被 SpringerLink 等数据库收录! |
|