Passivation of GaSb by sulfur treatment |
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Authors: | M Pérotin P Coudray L Gouskov H Luquet C Llinarès J J Bonnet L Soonckindt B Lambert |
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Affiliation: | (1) Centre d’Electronique de Montpellier, Université Montpellier II, Place E. Bataillon, 34095 Montpellier Cedex 05, France;(2) Laboratoire d’Etudes des Surfaces, Interfaces et Composants Université Montpellier II, Place E. Bataillon, 34095 Montpellier Cedex 05, France;(3) Centre National d’Etudes des Télécommunications (CNET), 2, route de Trégastel, 22301 Lannion Cedex, France |
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Abstract: | Some features of the band structure of GaSb have led to a renewed interest in this material. It is well known that Ga(Al)Sb
alloys are good candidates to realize avalanche photodetectors, due to their high hole kp/electron kn ionization coefficient
ratio. In addition, recent studies have shown GaSb to be attractive for realizing tunneling barriers exhibiting a high value
of the peak-to-valley current ratio or IR photodectectors. In order to optimize such devices, the passivation of GaSb is of
great interest. Unfortunately, very few investigations have been reported in the literature on GaSb passivation. This paper
reports experimental results concerning GaSb surface passivation using a chemical sulfuration method. Physicochemical analysis
is attempted through ellipsometric, photoluminescence, and Auger electron spectroscopy measurements. Polluting oxygen and
carbon agents are found to be removed from the surface using this process, leading to Schottky diodes of better quality. In
addition, the sulfur treatment is shown to stabilize the cleaned surface. |
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Keywords: | Deoxidization GaSb passivation S Sulfuration |
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