A 5 mm×5 mm mid-wavelength infrared HgCdTe photodiode array with negative luminescence efficiency ∼95% |
| |
Authors: | J R Lindle W W Bewley I Vurgaftman J R Meyer J L Johnson M L Thomas E C Piquette W E Tennant |
| |
Affiliation: | (1) Code 5613, Naval Research Laboratory, 20375 Washington, DC;(2) Imaging Division, Rockwell Scientific, 91360 Thousand Oaks, CA |
| |
Abstract: | The negative luminescence (NL) efficiency of a 5 mm×5 mm array (100% effective fill factor) of HgCdTe photodiodes (λco=4.8 μm at 295 K) has been measured as a function of temperature. The internal NL efficiency of ≈95% at λ=4 μm is nearly independent
of temperature in the 240–300 K range and, at 300 K, corresponds to an apparent temperature reduction of 60 K. This performance
is obtained at a reverse-bias saturation-current density of only 0.11 A/cm2 at 296 K. With large area, high efficiency, and low saturation-current density, our results demonstrate a level of NL device
performance at which such applications as cold shields for large-format focal plane arrays (FPAs) and multipoint nonuniformity
correctors appear practical. |
| |
Keywords: | HgCdTe negative luminescence (NL) cold shielding |
本文献已被 SpringerLink 等数据库收录! |
|