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Mode of arsenic incorporation in HgCdTe grown by MBE |
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| Authors: | S Sivananthan P S Wijewarnasuriya F Aqariden H R Vydyanath M Zandian D D Edwall J M Arias |
| Affiliation: | (1) Microphysics Laboratory, Department of Physics (M/C 273), University of Illinois at Chicago, 845 W. Taylor St., Room 2236, 60680 Chicago, IL;(2) Avyd Devices, P.O. Box 7942, 92615-7942 Huntington Beach, CA;(3) Rockwell International Corporation, Science Center, 1049 Camino Dos Rios, 91358 Thousand Oaks, CA |
| Abstract: | The results of arsenic incorporation in HgCdTe layers grown by molecular beam epitaxy (MBE) are reported. Obtained results indicate that arsenic was successfully incorporated as acceptors in MBE-HgCdTe layers after a low temperature anneal. Secondary ion mass spectrometry and Hall effect measurements confirm that arsenic is incorporated with an activation yield of up to 100%. This work confirms that arsenic can be used as an effective dopant of MBE-HgCdTe after a low temperature annealing under Hg-saturated conditions. |
| Keywords: | Arsenic doping HgCdTe molecular beam epitaxy (MBE) p-type doping secondary ion mass spectrometry (SIMS) |
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