Elevated-Temperature Annealing Effects on AlGaN/GaN Heterostructures |
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Authors: | Benedict Ofuonye Jaesun Lee Minjun Yan Qhalid Fareed Iftikhar Ahmad Asif Khan Ilesanmi Adesida |
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Affiliation: | 1.Micro and Nanotechnology Laboratory, Department of Electrical and Computer Engineering,University of Illinois at Urbana-Champaign,Urbana,USA;2.Department of Electrical and Computer Engineering,University of South Carolina,Columbia,USA |
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Abstract: | The effect of high-temperature annealing of undoped AlGaN/GaN heterostructures on different substrates was systematically
studied between 1100°C and 1230°C. An AlN spacer layer was found to add stability to structures on sapphire substrates. AlGaN/GaN
heterostructures on SiC substrates demonstrated excellent robustness for the temperature range studied, maintaining their
mobility, sheet resistance, and sheet concentration values, even after annealing. A silicon nitride, SiN
x
, capping layer was found to assist in minimizing surface roughness during annealing and maintaining the electrical characteristics
of the heterostructures. AlGaN/GaN heterostructures on SiC substrates showed a 20% decrease in mobility for uncapped samples
compared with SiN
x
-capped samples. |
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Keywords: | |
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