The determination of the interface-state density distribution from the capacitance-frequency measurements in Au/n-Si schottky barrier diodes |
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Authors: | E Ayyildiz Ç Nuho Lu A Türüt |
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Affiliation: | (1) Faculty of Sciences and Arts, Department of Physics, Erciyes University, Kayseri, Turkey;(2) Faculty of Sciences and Arts, Department of Physics, Atatürk University, 25240 Erzurum, Turkey |
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Abstract: | The Au/n-Si Schottky barrier diodes (SBDs) with 200-μm (sample D200) and 400-μm (sample D400) bulk thicknesses have been fabricated.
The ideality factor and the barrier height have been calculated from the forward-bias current-voltage (I-V) characteristics
of D200 and D400 SBDs. The energy distribution of the interface states and relaxation time are found from the capacitance-frequency
(C-f) characteristics. The density of interface state and relaxation times have a (nearly constant) slow exponential rise
with bias in the range of Ec −0.77 and Ec −0.47 eV from the midgap toward the bottom of the conductance band. Furthermore, the energy distribution of the interface
states obtained from C-f characteristics has been compared with that obtained from the forward-bias I-V characteristics. |
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Keywords: | Schottky diodes Au/n-Si interface states |
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