Thermal Management and Interfacial Properties in High-Power GaN-Based Light-Emitting Diodes Employing Diamond-Added Sn-3 wt.%Ag-0.5 wt.%Cu Solder as a Die-Attach Material |
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Authors: | Chia-Ju Chen Chih-Ming Chen Ray-Hua Horng Dong-Sing Wuu Jhih-Sin Hong |
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Affiliation: | (1) Optoelectronics Packaging and Materials Labs, 916 Engineering Tower, University of California, Irvine, CA 92697-2575, USA; |
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Abstract: | The thermal management of high-power GaN-based light-emitting diodes (LEDs) soldered with Sn-3 wt.%Ag-0.5 wt.%Cu (SAC305)
solder and diamond-added SAC305 solder was evaluated. Diamond addition was found to significantly reduce the surface temperature
and total thermal resistance of the LEDs, revealing that diamond-added SAC305 solder is a promising die-attach material for
high-power LED packaging. Interfacial reactions in the LED solder joints were also investigated. The thin Au wetting layer
in the chip’s backside metallization was rapidly consumed in the initial stage of reflow, forming an AuSn4 phase at the interface. Subsequently, the AuSn4 phase detached from the interface, leading to dewetting of the SAC305 solder from the LED chip. To avoid dewetting, a new
backside metallization of LED chips should be developed for SAC305 solder. |
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