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Arsenic incorporation in InAsP/InP quantum wells |
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| Authors: | G Dagnall A S Brown S R Stock |
| Affiliation: | (1) School of Electrical and Computer Engineering, Georgia Institute of Technology, 791 Atlantic Dr., 30332-0269 Atlanta, Georgia;(2) School of Material Science and Engineering, Georgia Institute of Technology, 778 Atlantic Dr., 30332-0245 Atlanta, Georgia |
| Abstract: | InAsP/InP multiquantum well structures were grown by solid source molecular beam epitaxy using either As2 or As4 over a substrate temperature range of 420–535°C. All quantum wells had similar arsenic compositions with a 2.2% standard deviation regardless of arsenic species or growth temperature. This temperature insensitivity of arsenic incorporation in InAsP is in sharp contrast to InGaAsP in which arsenic composition is very sensitive to both substrate temperature and gallium percentage in the compound. The insensitivity of arsenic incorporation in InAsP to substrate temperature may result from growth in a phosphorus rich condition with indium as the only available cation. |
| Keywords: | InAsP/InP solid source molecular beam epitaxy (SSMBE) multiquantum well (MQW) high-resolution x-ray diffraction (HRXRD) dimer arsenic (As2) tetramer arsenic (As4) |
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