Modulation spectroscopy studies of defects |
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Authors: | R S Bauer |
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Affiliation: | (1) Xerox Palo Alto Research Center Palo Alto, 94304 California |
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Abstract: | We examine some relationships between defect characteristics and the modulated optical properties of solids. In particular,
the effects of an electric field ℰ on the N absorption in GaP are presented. The crystallographic-orientation dependence is
used to determine symmetry properties of the impurity electron states and their interaction with the host band structure.
These data also yield an impurity concentration which is in agreement (to within a factor of 2) with results obtained using
other techniques. The Franz-Keldysh mechanism responsible for the electro-absorption suggests that in indirect gap semiconductors,
an electric field should double the luminescence. This enhancement will be greatest for ℰ along the orbital axis of the luminescent
center. Generalizations of this work to other chemical and structural defects are discussed. |
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Keywords: | modulated optical spectroscopy electronic states defects impurities GaP:N luminescence |
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