Cw laser crystallization of glow discharge a-Si:H on glass substrates |
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Authors: | I D Calder K L Kavanagh H M Naguib C Brassard J F Currie P Depelsenaire R Groleau |
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Affiliation: | (1) Bell-Northern Research, K1Y 4H7 Ottawa, Ontario, Canada;(2) Département de Génie Physique, Ecole Polytechnique, H3C 3A7 Montréal, Québec, Canada |
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Abstract: | Glow discharge hydrogenated amorphous Si films were crystallized using a cw Ar laser. The properties of the crystallized films
were studied by optical and electron microscopy, electrical measurements and elastic recoil detection (ERD) analysis. In addition,
a preferential plasma etching technique was used to determine the degree of crystallization. Large (>3 μm) high quality crystallites
were induced above a threshold laser power of 100 W/cm by an explosive crystallization process. This was accompanied by the
formation of bubbles and ejection of material from the crystallization centers. The sheet resistivity decreased by five to
six orders of magnitude. Some 50–90% of the hydrogen remained in the films after laser annealing. A simple model shows that
solid state diffusion accounts for the final hydrogen distribution in the laser annealed films. The use of this material for
the fabrication of devices on glass substrates is discussed. |
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Keywords: | laser annealing amorphous silicon crystallization glass substrate |
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