Hydrogen plasma passivation of bulk GaAs and Al0.3Ga0.7As/GaAs multiple-quantum-well structures on Si substrates |
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| Authors: | G Wang T Ogawa F Kunimasa M Umeno T Soga T Jimbo T Egawa |
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| Affiliation: | (1) Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555 Nagoya, Japan;(2) Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555 Nagoya, Japan;(3) Research Center for Micro-Structure Devices, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, 466-8555 Nagoya, Japan |
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| Abstract: | Hydrogen (H) plasma passivation effects on GaAs grown on Si substrates (GaAs on Si) are investigated in detail. H plasma exposure
effectively passivates both the shallow and deep defects in GaAs on Si, which improves both the electrical and optical properties.
It was found that the minority carrier lifetime is increased and the deep level concentration is decreased by the H plasma
exposure. In addition, after H plasma exposure, room temperature photoluminescence (PL) for Al0.3Ga0.7As/GaAs multiple-quantum-well (MQW) on Si is enhanced with a decrease in the spectral width. |
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| Keywords: | GaAs on Si hydrogen (H) plasma passivation minority carrier lifetime dislocation |
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