Fabrication of dry-etched mirrors in GaAs-based and InP-based lasers using chemically assisted ion-beam etching at low temperatures |
| |
Authors: | R E Sah J D Ralston J Daleiden E C Larkins S Weisser J Fleissner W Benz |
| |
Affiliation: | 1. Fraunhofer-Institut für Angewandte Festk?rperphysik, Tullastr. 72, 79108, Freiburg, Germany
|
| |
Abstract: | We have fabricated dry-etched mirrors in high-speed InGaAs/GaAs/AlGaAs pseudomorphic multiple quantum well ridge-waveguide
lasers at 60°C and in InGaAs/InP bulk lasers at 5°C using enhanced chemically assisted ion-beam etching (CAIBE) technique.
The technique allows the etching of laser structures with good surface morphology and excellent anisotropy without cold traps
in the etching system. Characteristics of the dry-etched facet lasers match those of cleaved devices. The low sample temperatures
for etching allowed the use of standard photoresists as etch masks. |
| |
Keywords: | Dry-etched mirrors GaAs-based lasers InP-based lasers ion-beam etching |
本文献已被 SpringerLink 等数据库收录! |