Behaviour of erbium implanted in InP |
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| Authors: | C Rochaix A Rolland P N Favennec B Lambert A Le Corre H L’Haridon M Salvi |
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| Affiliation: | (1) Centre National d’Etudes des Télécommunications, LAB/OCM/TOH Route de Trégastel, 22301 Lannion Cedex, France |
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| Abstract: | Erbium impurities were implanted in indium phosphide. The 2 K, 77 K and 300 K photoluminescence spectra show, after annealing
at high temperature, the main erbium emission centered at 1.536μm. The variation of this Er-peak luminescence is studied as a function of the implanted dose, the annealing temperature and
the annealing duration. |
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| Keywords: | Erbium InP ion implantation photoluminescence |
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