Application of negative electron affinity materials to imaging devices

Recent advances in materials technology, activation technology, and device technology have brought to fruition practical imaging devices utilizing NEA photoemitters. This paper describes the characteristics of proximity-focused image tubes utilizing large-area semitransparent, single-crystal III-V photocathode structures. Since the spectral response of the photocathode is determined by choice of the material used as the photoemitting layer, specific choices allow optimization for specific applications; e.g., laser illuminators. The material selection criteria and methods of fabricating the photocathode material structure will be discussed. The use of NEA materials allows the separation of the bulk photocathode material from other tube processing variables and has allowed a high degree of reproducibility from device to device. Specific device characteristics to be included in this discussion are resolution, stability of the photocathode during operation, and photocathode spectral data.