Distortion in polar modulated CMOS RF power amplifiers |
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Authors: | Patrick Reynaert Michiel Steyaert |
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Affiliation: | (1) Departement of electrical engineering, Katholieke Universiteit Leuven, ESAT-MICAS Kasteelpark Arenberg 10, BE-3001 Leuven, Belgium |
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Abstract: | Polar modulation of a switching RF amplifier is an excellent candidate to combine both linearity, efficiency and CMOS integration
for RF power amplifiers used in mobile and wireless communication systems. In this paper, the different sources of distortion
associated with polar modulation are discussed and verified by measurement results. A fully integrated linearized CMOS RF
Power Amplifier for GSM–EDGE, realized in a 0.18 μm CMOS technology, is used as a benchmark to validate the presented theory.
It is demonstrated how the combination of a differential delay between the amplitude signal and the phase signal, together
with the AM–PM distortion of the Class E amplifier, generates an asymmetry in the output spectrum. The effect of low-pass
filtering of the envelope signal is investigated and the degradation on the linearity with and without delay adjustment is
given. |
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Keywords: | |
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