CMOS Microsystem Front-End for MicroTesla Resolution Magnetic Field Measurement |
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Authors: | V Frick L Hebrard P Poure F Braun |
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Affiliation: | (1) Laboratoire d'Electronique et de Physique des Systèmes Instrumentaux, Université Louis Pasteur—IN2P3 23, rue du Lss, BP 20, F-67037 STRASBOURG CEDEX 02, France |
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Abstract: | In this paper we discuss the conception and performances of a monolithic microsystem for magnetic field measurement built in standard 0.6 m CMOS technology. It is shown that 5.2 microTesla resolution over 1 kHz bandwidth (5 Hz to 1 kHz) can be achieved by combining a particular Hall effect based sensing device and appropriate analog conditioning electronics. The study focuses on the methods used to drive up the sensor's sensitivity and to drive down the system's noise level in order to achieve the above-mentioned resolution. A specific circuitry is proposed for biasing the sensor. |
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Keywords: | microsystems magnetic field sensor Hall effect generators submicronic standard CMOS process low-noise design |
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