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CMOS Microsystem Front-End for MicroTesla Resolution Magnetic Field Measurement
Authors:V Frick  L Hebrard  P Poure  F Braun
Affiliation:(1) Laboratoire d'Electronique et de Physique des Systèmes Instrumentaux, Université Louis Pasteur—IN2P3 23, rue du Loeligss, BP 20, F-67037 STRASBOURG CEDEX 02, France
Abstract:In this paper we discuss the conception and performances of a monolithic microsystem for magnetic field measurement built in standard 0.6 mgrm CMOS technology. It is shown that 5.2 microTesla resolution over 1 kHz bandwidth (5 Hz to 1 kHz) can be achieved by combining a particular Hall effect based sensing device and appropriate analog conditioning electronics. The study focuses on the methods used to drive up the sensor's sensitivity and to drive down the system's noise level in order to achieve the above-mentioned resolution. A specific circuitry is proposed for biasing the sensor.
Keywords:microsystems  magnetic field sensor  Hall effect generators  submicronic standard CMOS process  low-noise design
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