多变量离子注入型量子阱混杂效应

为实现InP基单片集成光电子器件和系统,对InGaAsP/InGaAsP分别限制异质结多量子阱激光器结构展开量子阱混杂(QWI)技术研究。在不同能量P离子注入、不同快速热退火(RTA)条件以及循环退火下,研究了有源区量子阱混杂技术,实验结果采用光致发光(PL)谱进行表征。实验结果表明:在不同变量下皆可获得量子阱混杂效果,其中退火温度影响最为显著,且循环退火可进一步提高量子阱混杂效果;PL谱蓝移随着退火温度、退火时间和注入能量的增大而增大,退火温度对蓝移的影响最大,在注入剂量为1×10^14 ion/cm2,注入能量为600keV,750℃二次退火150s时获得最大蓝移量116nm。研究结果为未来基于QWI技术设计和制备单片集成光电子器件和系统奠定了基础。

Multiple Factor Ion Implantation-Induced Quantum Well Intermixing Effect

To realize InP-based monolithic integrated optoelectronic devices and systems,the quantum well intermixing(QWI)technology has been experimentally investigated for the InGaAsP/InGaAsP confinement heterojunction multiple quantum well laser structures herein.The active-area QWI technology realized under P-ion implantation with different energies,different rapid thermal annealing(RTA)conditions,and cycle annealing is investigated,and the experimental results are characterized using photoluminescence(PL)spectra.Experimental results show that the QWI effect can be observed for all the samples with different variables,where the annealing temperature has the most significant effect and the cycle annealing can further enhance the QWI effect.The blueshift in PL spectra increases with the annealing temperature and time and implantation energy,and the annealing temperature has the greatest effect on the blue shift.Finally,the maximum blue-shift achieved is approximately 116 nm with secondary annealing at 750℃for 150 swhen the injection dose and energy are 1×10^14 ion/cm2 and 600 keV,respectively.Our findings will benefit future design and fabrication of monolithic integrated optoelectronic devices and systems using QWI technology.