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弱P型碲镉汞材料和陷阱模式光导探测器
引用本文:张可锋,林杏潮,张莉萍,王仍,焦翠灵,陆液,王妮丽,李向阳.弱P型碲镉汞材料和陷阱模式光导探测器[J].激光与光电子学进展,2011(6):13-16.
作者姓名:张可锋  林杏潮  张莉萍  王仍  焦翠灵  陆液  王妮丽  李向阳
作者单位:中国科学院上海技术物理研究所红外成像材料与器件重点实验室;
基金项目:上海市自然科学基金(10ZR1434500)资助课题
摘    要:窄禁带碲镉汞(HgCdTe)为电子和空穴混合导电的多载流子体系材料,特别是对于弱p型材料,由于电子和空穴的迁移率相差大约两个数量级,更容易受到少数载流子电子的干扰,因此单一磁场的霍尔测试无法区分迁移率较低性能较差的n型材料和p型材料.通过变温变磁场的霍尔测试对两种碲镉汞材料的磁输运特性进行了测试区分.另外对由弱p型材料...

关 键 词:探测器  霍尔测量  HgCdTe  磁输运  陷阱模式

Slight p-Type HgCdTe and Trapping-Mode Photoconductive HgCdTe Detectors
Zhang Kefeng Lin Xingchao Zhang Liping Wang Reng Jiao Cuiling Lu Ye Wang Nili Li Xiangyang.Slight p-Type HgCdTe and Trapping-Mode Photoconductive HgCdTe Detectors[J].Laser & Optoelectronics Progress,2011(6):13-16.
Authors:Zhang Kefeng Lin Xingchao Zhang Liping Wang Reng Jiao Cuiling Lu Ye Wang Nili Li Xiangyang
Affiliation:Zhang Kefeng Lin Xingchao Zhang Liping Wang Reng Jiao Cuiling Lu Ye Wang Nili Li Xiangyang(Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China)
Abstract:Very-narrow-gap bulk-grown HgCdTe single crystals are multicarrier semiconductor system material,since the multiple electrons and holes species frequently contribute to the conduction.Especially for the slight p-type HgCdTe single crystals,the conventional measurements of a single magnetic field can lead to erroneous conclusions because of the large ratio of the electron mobility to hole mobility.The n-type crystals with poor mobility and slight p-type crystals with excellent electrical properties cannot be...
Keywords:detectors  Hall measurements  HgCdTe  magneto-transport  trapping-mode  
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