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氧化膜强化技术在钽电容器生产中的应用
引用本文:焦红忠,董宁利,孙红杰.氧化膜强化技术在钽电容器生产中的应用[J].电子工艺技术,2012,33(2):90-92.
作者姓名:焦红忠  董宁利  孙红杰
作者单位:宁夏星日电子有限公司,宁夏石嘴山,753000
摘    要:采用氧化膜强化技术在钽阳极体外表面形成抗机械应力的强化氧化膜,并模拟钽电容器回流焊过程,研究回流焊前后钽电容器漏电流变化以及对击穿电压(BDV)的影响。试验结果显示:在回流焊安装前后,应用氧化膜强化技术的电容器漏电流增幅小于普通产品14%;耐BDV比普通产品高6 V。

关 键 词:钽电解电容器  击穿电压  氧化膜强化  回流焊

Application of Reinforced Oxide Film for Tantalum Capacitors
JIAO Hong-zhong,DONG Ning-li,SUN Hong-jie.Application of Reinforced Oxide Film for Tantalum Capacitors[J].Electronics Process Technology,2012,33(2):90-92.
Authors:JIAO Hong-zhong  DONG Ning-li  SUN Hong-jie
Affiliation:(Ningxia Xingri Electronics Co. Ltd., Shizuishan 753000, China)
Abstract:Oxide film reinforcement technology was used to form robust oxide film to resist mechanical stress on the outer surface of tantalum anode. Simulated reflow soldering process for tantalum Capacitor and made a study on DC leakage current change before and after reflew soldering and influence of reinforced oxide film on breakdown voltaoe. The result of tests showed for the capacitors prepared with reinforced oxide film, the rise of DC leakage current before and after reflow soldering has reduced by 14% compared with the capacitors prepared with conventional production process; Breakdown voltage measured is 6V higher than the capacitors prepared with conventional production process.
Keywords:Tantalum electrolytic capacitor  Breakdown voltage  Reinforced oxide film  Reflow soldering
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