| 蓝宝石衬底片的抛光研究 |
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| 引用本文： | 王娟,檀柏梅,赵之雯,李薇薇,周建伟. 蓝宝石衬底片的抛光研究[J]. 电子工艺技术, 2005, 26(4): 228-231 |
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| 作者姓名： | 王娟 檀柏梅 赵之雯 李薇薇 周建伟 |
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| 作者单位： | 河北工业大学微电子研究所,天津,300130 |
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| 摘 要： | 本研究对SiO2磨料抛光蓝宝石衬底片进行了研究,结果表明,采用大粒径、高浓度的SiO2磨料抛光可以获得良好的表面状态和较高的去除速率。抛光的适宜的温度及pH值条件为:T=30℃;13.0>pH≥9.0。并且在抛光时应加入适量添加剂,方可获得较为理想的表面状态和较高的去除速率。实验同样证明,这种低成本、高质量的抛光除可以应用在蓝宝石的抛光以外,还可以应用在其它一些硬质材料的抛光工艺中。
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| 关 键 词： | 蓝宝石 抛光 机理 硅溶胶 |
| 文章编号： | 1001-3474(2005)04-0228-04 |
| 修稿时间： | 2005-05-16 |
Study of Process Parameters and Mechanism of Computer Hard Disk in CMP |
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| WANG Juan,TAN Bai-mei,ZHAO Zhi-wen,LI Wei-wei,ZHOU Jian-wei. Study of Process Parameters and Mechanism of Computer Hard Disk in CMP[J]. Electronics Process Technology, 2005, 26(4): 228-231 |
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| Authors: | WANG Juan TAN Bai-mei ZHAO Zhi-wen LI Wei-wei ZHOU Jian-wei |
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| Abstract: | The concept of chemical mechanical polishing (CMP) was examined for finishing sapphire.Silica sols are used.The results indicated that,with similar particle size and shape,the abrasives achieved the best surface finish and efficient material removal.The feasible temperature is 30 and the pH is 9.0 approximatively.And the additive should be added.Good removal rate and surface finish with presumably low subsurface damage can be achieved by this process.The results show the potential for cost reduction and quality improvement in industrial finishing of sapphire and perhaps other hard materials. |
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| Keywords: | Sapphire Chemical mechanical polishing Mechanism Nano-SiO_2 colloid |
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