A novel technique of N2O-treatment onNH3-nitrided oxide as gate dielectric for nMOS transistors |
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Authors: | Zeng X Lai PT Ng WT |
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Affiliation: | Dept. of Electr. & Electron. Eng., Hong Kong Univ.; |
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Abstract: | A novel technique of N2O treatment on NH3-nitrided oxide is used to prepare thin gate oxide. Experiments on MOS capacitors and nMOSFET's with this kind of gate dielectric show that N2O treatment is superior to conventional reoxidation step in suppressing both electron and hole trappings and interface trap creation under high-field stress. Interface hardness against hot-carrier bombardment and neutral electron trap generation are also improved. Thus, N2O treatment on NH3 -nitrided oxide shows excellent electrical and reliability properties, while maintaining sufficiently high nitrogen concentration in gate oxide which offers good resistance to dopant penetration |
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