A non-local impact ionization/lattice temperature model for VLSIdouble-gate ultrathin SOI NMOS devices |
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| Authors: | Ker-Wie Su Kuo JB |
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| Affiliation: | Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei ; |
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| Abstract: | This paper presents an analytical drain current model for VLSI double-gate ultrathin SOI NMOS devices considering both the nonlocal impact ionization effect and the lattice temperature effect. Supported by the experimental data, the analytical model predicts that the double-gate SOI NMOS device has a more obvious nonlocal impact ionization effect and a higher lattice thermal effect as compared to the single-gate device |
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