Coupled-quantum-well field-effect resonant tunneling transistor formulti-valued logic/memory applications |
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Authors: | Mikkelson CH Seabaugh AC Beam EA III Luscombe JH Frazier GA |
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Affiliation: | Central Res. Labs., Texas Instrum. Inc., Dallas, TX; |
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Abstract: | A vertical field-effect resonant tunneling transistor is demonstrated consisting of a triple-barrier, double-well resonant tunneling diode (3bRTD) that can be depleted by the action of side gates. The 3bRTD features a double peak current-voltage characteristic in which the second valley current is less than the first valley current. Combination of the resonant tunneling transistor and a constant current load is shown to yield both binary and ternary logic and memory functions |
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