Electrical measurement of electron and hole mobilities as afunction of injection level in silicon |
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Authors: | Bellone S Persiano GV Strollo AGM |
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Affiliation: | Dept. of Inf. & Electr. Eng., Salerno Univ. ; |
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Abstract: | The first experimental method to separately measure the hole and the electron mobilities as a function of the injection level is presented. The carrier mobilities are extracted from impulsive measurements of the resistance associated with a n+-ν-n + (p+-π-p+) structure, where the conductivity of the intermediate layer is controlled by the injection of an incorporated p-n junction diode. Two-dimensional numerical simulation is used to assess the accuracy of the proposed measurement technique. Experimental results obtained at room temperature on both n-type and p-type materials are presented and compared to existing analytical mobility models |
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