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Zr与稀土Nd复合掺杂对钛酸钡陶瓷结构及介电性能的影响
引用本文:林彩平,刘彭义,陈伟业.Zr与稀土Nd复合掺杂对钛酸钡陶瓷结构及介电性能的影响[J].电子元件与材料,2012(8):5-8.
作者姓名:林彩平  刘彭义  陈伟业
作者单位:暨南大学物理系
基金项目:广东省教育部产学研结合资助项目(No.2009B090300093);广州市科技计划基金资助项目(No.2008Z1-411)
摘    要:在1 270℃的烧结温度下,采用固相反应法对BaTiO3粉体进行Nd2O3和ZrO2双施主复合掺杂,合成(Ba0.98Nd0.02)(Ti1–xZrx)O3(BTNZ)陶瓷,研究了Zr掺杂量对BTNZ陶瓷的显微结构及介电性能的影响。结果表明:随着Zr掺杂量的增加,BTNZ陶瓷的介电峰移向室温;加入适量的Zr离子替代BaTiO3中的Ti离子能很好地改善BTNZ陶瓷的介电性能,当Zr掺杂量为x=0.01时,BTNZ陶瓷的相对介电常数可达7 200。

关 键 词:钛酸钡陶瓷  钕掺杂  锆掺杂  介电性能

Effects of Zr and Nd co-doping on structure and dielectric properties of BaTiO3 ceramic
LIN Caiping,LIU Pengyi,CHEN Weiye.Effects of Zr and Nd co-doping on structure and dielectric properties of BaTiO3 ceramic[J].Electronic Components & Materials,2012(8):5-8.
Authors:LIN Caiping  LIU Pengyi  CHEN Weiye
Affiliation:(Department of Physics,Jinan University,Guangzhou 510632,China)
Abstract:(Ba0.98Nd0.02)(Ti1-xZrx)O3(BTNZ) ceramics were prepared using solid phase synthesis method at the sintering temperature of 1 270 ℃.The effects of Zr-doping amount on microstructure and dielectric properties of the ceramic were investigated.The results show that the dielectric peak moves to the room temperature with the increase of Zr dopant,that Zr4+ replace the Ti4+ of BaTiO3 improve the dielectric properties of the BTNZ ceramics,and when the amount of Zr4+ doping is x=0.01,the r is 7 200.
Keywords:BaTiO3 ceramic  Nd-doped  Zr-doped  dielectric properties
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