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钨掺杂对二氧化钛压敏电阻瓷电性能的影响
引用本文:苏文斌,王矜奉,陈洪存,王文新,臧国忠,李长鹏.钨掺杂对二氧化钛压敏电阻瓷电性能的影响[J].电子元件与材料,2002,21(5):1-2,5.
作者姓名:苏文斌  王矜奉  陈洪存  王文新  臧国忠  李长鹏
作者单位:山东大学物理系,山东,济南,250100
摘    要:通过对样品的伏案性质、介电常数以及晶界势垒的测量和分析,研究了WO3对TiO2压敏电阻瓷电性能的影响。研究发现掺入x(WO3)为0.25%的样品表现出最好的压敏性质,其压敏电压为42.5V/mm,非线性系数α达到9.6,以及较高的相对介电常数(εr=7.41×104),是一种具有较好潜力的电容-压敏电阻器。通过不同烧结温度的实验,发现1 350℃是最佳烧结温度。类比ZnO压敏材料的晶界势垒模型,提出了适合TiO2压敏材料的肖特基势垒模型。

关 键 词:压敏材料  二氧化钛  肖特基势垒
文章编号:1001-2028(2002)05-0001-02

Effects of Tungsten Dopant on the Electrical Properties of TiO2-based Ceramics for Varistors
SU Wen-bin,WANG Jin-feng,CHEN Hong-cun,WANG Wen-xin,ZANG Guo-zhong,LI Chang-peng.Effects of Tungsten Dopant on the Electrical Properties of TiO2-based Ceramics for Varistors[J].Electronic Components & Materials,2002,21(5):1-2,5.
Authors:SU Wen-bin  WANG Jin-feng  CHEN Hong-cun  WANG Wen-xin  ZANG Guo-zhong  LI Chang-peng
Abstract:The electrical properties of TiO2 based ceramics for varistors doped with various VO3 were investigated by measuring the properties of V-1 characteristic,permittivity and boundary defect barriers.It is found that an optimal composition doped with 0.25 mol % WO3 exhibits a breakdown electrical field of 42.5 V/mm,a ultrahigh relative dielectric constant of 7.41×104 and a nonlinear coefficient of 9.6 It is also found that the best sintering temperature is 1 350℃ . By analogizing to the grain boundary defects model for ZnO varistors,a Schottky potential barriers model for TiO2 based ceramics for varistors is introduced.
Keywords:ceramics for varistors  titanium oxide  Schottky potential barriers
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