| 钨掺杂对二氧化钛压敏电阻瓷电性能的影响 |
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| 引用本文： | 苏文斌,王矜奉,陈洪存,王文新,臧国忠,李长鹏.钨掺杂对二氧化钛压敏电阻瓷电性能的影响[J].电子元件与材料,2002,21(5):1-2,5. |
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| 作者姓名： | 苏文斌 王矜奉 陈洪存 王文新 臧国忠 李长鹏 |
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| 作者单位： | 山东大学物理系,山东,济南,250100 |
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| 摘 要： | 通过对样品的伏案性质、介电常数以及晶界势垒的测量和分析,研究了WO3对TiO2压敏电阻瓷电性能的影响。研究发现掺入x(WO3)为0.25%的样品表现出最好的压敏性质,其压敏电压为42.5V/mm,非线性系数α达到9.6,以及较高的相对介电常数(εr=7.41×104),是一种具有较好潜力的电容-压敏电阻器。通过不同烧结温度的实验,发现1 350℃是最佳烧结温度。类比ZnO压敏材料的晶界势垒模型,提出了适合TiO2压敏材料的肖特基势垒模型。
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| 关 键 词： | 压敏材料 二氧化钛 肖特基势垒 |
| 文章编号： | 1001-2028(2002)05-0001-02 |
Effects of Tungsten Dopant on the Electrical Properties of TiO2-based Ceramics for Varistors |
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| SU Wen-bin,WANG Jin-feng,CHEN Hong-cun,WANG Wen-xin,ZANG Guo-zhong,LI Chang-peng.Effects of Tungsten Dopant on the Electrical Properties of TiO2-based Ceramics for Varistors[J].Electronic Components & Materials,2002,21(5):1-2,5. |
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| Authors: | SU Wen-bin WANG Jin-feng CHEN Hong-cun WANG Wen-xin ZANG Guo-zhong LI Chang-peng |
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| Abstract: | The electrical properties of TiO2 based ceramics for varistors doped with various VO3 were investigated by measuring the properties of V-1 characteristic,permittivity and boundary defect barriers.It is found that an optimal composition doped with 0.25 mol % WO3 exhibits a breakdown electrical field of 42.5 V/mm,a ultrahigh relative dielectric constant of 7.41×104 and a nonlinear coefficient of 9.6 It is also found that the best sintering temperature is 1 350℃ . By analogizing to the grain boundary defects model for ZnO varistors,a Schottky potential barriers model for TiO2 based ceramics for varistors is introduced. |
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| Keywords: | ceramics for varistors titanium oxide Schottky potential barriers |
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