| Al掺杂ZnO厚膜的sol-gel法制备及其气敏性能研究 |
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| 引用本文： | 田野,潘国峰,杨瑞霞.Al掺杂ZnO厚膜的sol-gel法制备及其气敏性能研究[J].电子元件与材料,2010,29(11). |
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| 作者姓名： | 田野 潘国峰 杨瑞霞 |
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| 作者单位： | 河北工业大学信息工程学院; |
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| 基金项目： | 国家科技重大专项课题资助项目，国家自然科学基金资助项目 |
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| 摘 要： | 以硝酸锌、硝酸铝和氢氧化钠为原料,采用sol-gel法制备铝掺杂的纳米氧化锌厚膜(样品),并利用XRD和SEM对其微观结构进行了表征。研究了铝掺杂量和退火温度对ZnO厚膜的气敏性能的影响。结果表明:700℃退火、掺w(Al)为2.9%的样品对体积分数为4.0×10–1的丙酮有很好的选择性,最大灵敏度达到7 779左右,最佳工作温度约为162℃,响应、恢复时间均为1 s,最后讨论了铝掺杂纳米氧化锌的气敏机理。
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| 关 键 词： | sol-gel法 纳米ZnO厚膜 铝掺杂 气敏性能 灵敏度 |
Investigation on gas sensing properties of aluminum-doped ZnO thick films prepared by the sol-gel method |
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| TIAN Ye,PAN Guofeng,YANG Ruixia.Investigation on gas sensing properties of aluminum-doped ZnO thick films prepared by the sol-gel method[J].Electronic Components & Materials,2010,29(11). |
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| Authors: | TIAN Ye PAN Guofeng YANG Ruixia |
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| Affiliation: | TIAN Ye,PAN Guofeng,YANG Ruixia(School of Information Engineering,Hebei University of Technology,Tianjin 300130,China) |
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| Abstract: | Al-doped ZnO thick films(samples) were prepared using Zn(NO3)2.6H2O,Al(NO3)3.9H2O and NaOH as raw materials by the sol-gel method,and their microstructure was characterized with XRD and SEM.The effects of Al-doped amount and annealing temperature on the gas sensing properties of obtained ZnO thick films were investigated.The results indicate that doped w(Al) is 2.9%,sample shows excellent selectivity to acetone(volume fraction: 4.0×10–1) at an annealing temperature of 700 ℃ and the maximal sensitivity reaches about 7 779.The optimal working temperature is 162 ℃.The response time and recovery time are found to be 1 s and 1 s,respectively.The gas sensing mechanism of Al doped nano ZnO is also studied. |
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| Keywords: | sol-gel method nano ZnO thick films Al-doping gas sensing property sensitivity |
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