| 射频磁控溅射法制备掺锆氧化锌透明导电薄膜 |
| |
| 引用本文： | 刘汉法,张化福,类成新,袁长坤.射频磁控溅射法制备掺锆氧化锌透明导电薄膜[J].电子元件与材料,2008,27(11). |
| |
| 作者姓名： | 刘汉法 张化福 类成新 袁长坤 |
| |
| 作者单位： | 山东理工大学,物理与光电信息技术学院,山东,淄博,255049 |
| |
| 基金项目： | 山东理工大学创新团队支持计划 |
| |
| 摘 要： | 利用射频磁控溅射法在室温下制备出了掺锆氧化锌(ZnO∶Zr)透明导电薄膜。研究了溅射压强对ZnO∶Zr薄膜表面形貌、结构、光学和电学性能的影响。结果表明:ZnO∶Zr薄膜为六角纤锌矿结构的多晶薄膜,且具有c轴择优取向,溅射压强对薄膜电阻率有显著影响,压强为1.5Pa时,电阻率具有最小值1.77×10–3Ω·cm。所制备的ZnO∶Zr薄膜具有良好的附着性能,在可见光区平均透过率超过93%。
|
| 关 键 词： | 电子技术 ZnO∶Zr薄膜 透明导电薄膜 磁控溅射 |
Preparation of transparent conducting zirconium-doped zinc oxide thin films deposited by RF magnetron sputtering |
| |
| LIU Han-fa,ZHANG Hua-fu,LEI Cheng-xin,YUAN Chang-kun.Preparation of transparent conducting zirconium-doped zinc oxide thin films deposited by RF magnetron sputtering[J].Electronic Components & Materials,2008,27(11). |
| |
| Authors: | LIU Han-fa ZHANG Hua-fu LEI Cheng-xin YUAN Chang-kun |
| |
| Affiliation: | LIU Han-fa,ZHANG Hua-fu,LEI Cheng-xin,YUAN Chang-kun ( School of Physics , Optic-Electronic Information,University of Technology of Sh,ong,Zi bo 255049,Sh,ong Province,China) |
| |
| Abstract: | Transparent conducting zirconium-doped zinc oxide thin films were prepared by radio frequency magnetron sputtering at room temperature. The influence of sputtering pressure on surface morphology, micro-structure, optical and electrical properties of ZnO∶ Zr thin films were investigated. The results show that all the films are polycrystalline with a hexagonal structure and a preferred orientation along the c-axis. Sputtering pressure plays an important role on the electrical resistivity of ZnO ∶ Zr thin films. When the sputtering pressure is 1.5 Pa, it is obtained that the lowest electrical resistivity is 1.77×10–3 Ω·cm. All the films possess good adhesion and the average transmittance of over 93% in the visible range. |
| |
| Keywords: | electron technology zirconium-doped zinc oxide thin films transparent conducting films magnetron sputtering |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
|
