| 流延法制作AlN陶瓷基片工艺 |
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| 引用本文： | 吴音,周和平,缪卫国.流延法制作AlN陶瓷基片工艺[J].电子元件与材料,1996,15(1):20-23. |
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| 作者姓名： | 吴音 周和平 缪卫国 |
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| 作者单位： | 清华大学材料科学与工程系 |
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| 摘 要： | 研究出一种用流延法制作ＡＩＮ陶瓷基片的工艺。制备出性能优良的ＡＩＮ基片。经１６５０℃，保温２ｈ无压烧结制得的基片，其热导率达１３０Ｗ／（ｍ·Ｋ）、密度为３．３４ｇ／ｃｍ￣３，表面光滑平整，瓷体结构均匀，性能达到用干压法制备的同类基片的性能。
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| 关 键 词： | 氮化铝陶瓷，基片，流延成型法，工艺 |
A Manufacture Process for SubstrateUsing Tape-casting Formation |
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| Wu Yin,Zhou Heping,Miao Weiguo.A Manufacture Process for SubstrateUsing Tape-casting Formation[J].Electronic Components & Materials,1996,15(1):20-23. |
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| Authors: | Wu Yin Zhou Heping Miao Weiguo |
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| Affiliation: | Wu Yin;Zhou Heping;Miao Weiguo |
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| Abstract: | A newly developed process for making AIN substrate-tape-casting formation,firing at1 650℃,2 hrs, nonpressure-makes it possible to produce AIN substrates of better performance.The performances of the substrate so acquired are equal to those of the substrate made with press formation method,conductivity 130 W/ (m.K),density 3.34 g/cm￣3,smooth surface,homogeneoun structure. |
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| Keywords: | AIN ceramic substrate tape-casting formation process |
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