| 衬底温度和溅射偏压对ZnO:Al透明导电膜结构和光电特性的影响 |
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| 引用本文： | 杨田林,韩圣浩,张鹏,王爱芳.衬底温度和溅射偏压对ZnO:Al透明导电膜结构和光电特性的影响[J].电子元件与材料,2004,23(7):31-34. |
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| 作者姓名： | 杨田林 韩圣浩 张鹏 王爱芳 |
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| 作者单位： | 山东大学威海分校应用物理系,山东,威海,264209 |
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| 基金项目： | 国家自然科学基金资助项目(60176021) |
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| 摘 要： | 利用射频磁控溅射法在有机薄膜衬底和7059玻璃衬底上制备出了具有良好附着性的低电阻率的 ZnO:Al透明导电膜。研究了薄膜的结构和光电特性与衬底温度的关系,薄膜为多晶纤锌矿结构,垂直于衬底的 c 轴具有002]方向的择优取向,薄膜的最低电阻率分别为 1.01×10–3ù·cm 和 8.48×10–4ù·cm,在可见光区的平均透过率分别达到了72%和 85%。并研究了溅射偏压对有机衬底 ZnO:Al 薄膜结构及光电特性影响,最佳负偏压为 60 V。
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| 关 键 词： | ZnO:Al薄膜 衬底温度 溅射偏压 膜结构 光电性质 |
| 文章编号： | 1001-2028(2004)07-0031-04 |
Effects of Substrate Temperature and Sputtering Bias-voltage on ZnO:Al Film Structure and Photoelectric Properties |
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| YANG Tian-lin,HAN Sheng-hao,ZHANG Peng,WANG Ai-fang.Effects of Substrate Temperature and Sputtering Bias-voltage on ZnO:Al Film Structure and Photoelectric Properties[J].Electronic Components & Materials,2004,23(7):31-34. |
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| Authors: | YANG Tian-lin HAN Sheng-hao ZHANG Peng WANG Ai-fang |
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| Abstract: | Transparent conductive ZnO:Al films with good adherence and low resistivity were deposited on polyimide or 7059 glass substrates by RF magnetron. Of the film prepared, the resistivity is as low as 1.01×10-3 ù·cm and 8.48×10-4ù·cm, and transmittance 72% and 85% in visible range. XRD pattern shows that ZnO:Al film deposited on above-mentioned substrates is polycrystalline wurtzite structure with a preferred orientation of 222]. The effects of substrate temperature and sputtering bias-voltage on film structure and photoelectric properties are investigated. The optimum sputtering bias-voltage is 60 V. |
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| Keywords: | Al doped ZnO films substrate temperature sputtering bias-voltage film structure photoelectric properties |
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