| 掺杂浓度对AZO薄膜结构和性能的影响 |
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| 引用本文： | 葛春桥,夏志林,郭爱云.掺杂浓度对AZO薄膜结构和性能的影响[J].电子元件与材料,2004,23(9):31-33. |
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| 作者姓名： | 葛春桥 夏志林 郭爱云 |
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| 作者单位： | 武汉理工大学材料科学与工程学院,湖北,武汉,430070;武汉理工大学材料科学与工程学院,湖北,武汉,430070;武汉理工大学材料科学与工程学院,湖北,武汉,430070 |
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| 摘 要： | 采用溶胶–凝胶工艺在玻璃基片上制备出Al3+掺杂型的ZnO(AZO)透明导电薄膜,对薄膜进行了XRD和SEM分析,并对其光电性能作了详细的研究。结果表明薄膜为纤锌矿型结构,呈c轴方向择优生长;薄膜的可见光透过率可达80%以上;Al3+掺杂型的ZnO透明导电薄膜的电阻率为1.5×10–2~8.2×10–2?·cm。
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| 关 键 词： | 半导体材料 AZO薄膜 溶胶-凝胶 光电性能 |
| 文章编号： | 1001-2028(2004)09-0031-03 |
Influence of the Dopant Concentration on Its Microstructure and Properties of AZO Film |
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| GE Chun-qiao,XIA Zhi-lin,GUO Ai-yun.Influence of the Dopant Concentration on Its Microstructure and Properties of AZO Film[J].Electronic Components & Materials,2004,23(9):31-33. |
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| Authors: | GE Chun-qiao XIA Zhi-lin GUO Ai-yun |
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| Abstract: | AZO(Al:ZnO) films on glass substrate were prepared by sol-gel method. Their microstructures, electrical and optical properties were studied with X-ray diffraction spectroscopy (XRD) and SEM. The results show that they have a polycrystalline hexagonal wurtzite structure with highly preferred orientation along the (002) plane, their optical transmittance are over 80% and their electrical resistivity varied from1 5×10–2 to 8.2×10–2 ?·cm. |
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| Keywords: | semiconductor materials oploeleclronics and laser technology AZO thin film sol-gel electrical and optical properties |
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