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溅射功率对PET衬底上ZnO:Zr薄膜性能的影响
引用本文:刘汉法,张化福,袁玉珍,袁长坤,类成新.溅射功率对PET衬底上ZnO:Zr薄膜性能的影响[J].电子元件与材料,2009,28(9).
作者姓名:刘汉法  张化福  袁玉珍  袁长坤  类成新
作者单位:山东理工大学,理学院,山东,淄博,255049
基金项目:山东理工大学创新团队支持计划资助项目 
摘    要:采用直流磁控溅射法在室温下柔性PET衬底上制备出了高质量的掺锆氧化锌(ZnO:Zr)透明导电薄膜。研究了溅射功率对ZnO:Zr薄膜表面形貌、结构、电学和光学性能的影响。溅射功率对ZnO:Zr薄膜的电阻率影响显著:当溅射功率从60W增加到90W时,薄膜的电阻率先减小后增大,在最佳功率80W时,电阻率具有最小值3.67×10-3Ω·cm。所制备的ZnO:Zr薄膜具有良好的附着性能,在可见光区平均透射率高达90%。

关 键 词:ZnO:Zr薄膜  透明导电薄膜  磁控溅射  溅射功率

Effect of sputtering power on properties of ZnO∶Zr films deposited on PET substrate
LIU Hanfa,ZHANG Huafu,YUAN Yuzhen,YUAN Changkun,LEI Chengxin.Effect of sputtering power on properties of ZnO∶Zr films deposited on PET substrate[J].Electronic Components & Materials,2009,28(9).
Authors:LIU Hanfa  ZHANG Huafu  YUAN Yuzhen  YUAN Changkun  LEI Chengxin
Abstract:Transparent conducting zirconium-doped zinc oxide films with high transparency and relatively low resistivity were successfully prepared on flexible PET substrate by DC magnetron sputtering at room temperature.Structure,morphology,optical and electrical properties of ZnO:Z r films were investigated.Sputtering power has significant effect on the resistivity of ZnO:Z r films.When sputtering power increases from 60 W to 100 W,the resistivity of the deposited films initially decreases and then increases.At the optimum sputtering power of 80 W,the lowest resistivity of 3.67×10-3 Ω·cm is obtained.All the films present good adhesion and a high transmittance of over 90% in the visible range.
Keywords:zirconium-doped zinc oxide films  transparent conducting films  magnetron sputtering  sputtering power
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