n-ZnO/p-Si异质结UV增强型光电探测器的研究

采用平面工艺,在p+-Si背底上电子束蒸发Al制作欧姆电极,在p-Si外延层上溅射掺Al的 ZnO薄膜,再蒸发Al作有源区欧姆电极,研制成n-ZnO/p-Si异质结UV(ultraviolet)增强型光电探测器。测试结果表明:器件明显增强了200～400 nm紫外光的响应,同时保持了传统的Si探测器对波长大于400 nm波段的光谱响应,在330,420,468、525 nm附近有四个明显的光谱峰值响应。器件光致发光谱(PL)在371 nm处有发光峰值。

Study on n-ZnO/p-Si Heterojunction UV Enhanced Photoelectric Detectors

Using microelectronic flat procedure, with electronic beam evaporating (EBE) Al on the Si substrate back as ohmic contact, oxidizing and photoetching active region on the p epitaxial layer, sputting Al-doped ZnO thin film and EBE Al on it as ohmic contact, n-ZnO/p-Si heterojunction UV enhanced photodetectors were fabricated. The I-V characteristics, spectrum response and photoluminescence(PL) characteristics were tested and analyzed. The ultraviolet response from 200 nm to 40 0nm is evidently enhanced, and the spectrum response of wavelength larger than 400nm, which is the response wavelength range of traditional Si detectors, was also retained. At 330 nm, 420 nm, 468 nm and 525 nm, four response peaks were observed. A luminescence peak was also observed at 371 nm in the PL. The experiments show that n-ZnO/p-Si heterojunction UV enhanced photodetectors are obviously enhanced ultraviolet response, which has great developmental potential.