Al-N共掺杂ZnO:Mn稀磁半导体薄膜的结构与性能

采用反应磁控溅射法在室温下沉积前驱体氮化物,在大气环境、500℃下氧化退火30min后获得了Al-N共掺杂ZnO:Mn薄膜。研究了直流与射频反应磁控溅射对氧化退火薄膜结构和性能的影响。结果表明:两种工艺制备的退火薄膜均具有ZnO纤锌矿结构,且均为n型导电。射频溅射退火样品具有很好的c-轴择优取向,其表面光滑平整,表面粗糙度RMS值为1.2nm,且具有室温铁磁性,饱和磁化强度(Ms)和矫顽力(Hc)分别为46.8A·m–1和4.9×103A·m–1;而直流溅射退火样品表面凹凸不平,RMS值为25.8nm,室温下是反铁磁性的。

Structure and properties of Al-N co-doped ZnO:Mn diluted magnetic semiconductor thin films

Al-N co-doped ZnO:Mn thin films were fabricated by oxidative annealing nitride precursors, which were deposited at room temperature by reactive magnetron sputtering method. The nitride precursors were annealed at 500 ℃ for 30 min in air. The influences of DC and RF reactive magnetron sputterings on the structure and properties of oxidative annealed thin films were investigated. The results show that annealed thin films prepared by the two processes are all ZnO wurtzite structure, and n-type conduction. Sample obtained by RF sputtering and annealing is high preferentially oriented in the c-axis direction. Its surface is very smooth with RMS value of 1.2 nm, and it has room temperature ferromagnetism. The saturation magnetization (Ms) and coercivity (Hc) are 46.8 A·m–1 and 4.9×103 A·m–1, respectively. Sample obtained by DC sputtering and annealing has an accidented surface with RMS value of 25.8 nm, and it is antiferromagnetic at room temperature.